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ChinaBCP55E6327
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TEILNUMMER DES HERSTELLERS
BCP55E6327
BESCHREIBUNG
TRANS NPN 60V 1A SOT223-4
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 60 V 1 A 100MHz 2 W Surface Mount PG-SOT223-4-21
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,597
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA, 2V
Power - Max
2 W
Frequency - Transition
100MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Supplier Device Package
PG-SOT223-4-21
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0075
Andere Namen
2156-BCP55E6327
INFINFBCP55E6327
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Infineon Technologies BCP55E6327
Dokumente und Medien
Datasheets
1(BCP55E6327HTSA1)
Menge Preis
-
Stellvertreter
-