Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
SIHH14N60E-T1-GE3
BESCHREIBUNG
MOSFET N-CH 600V 16A PPAK 8 X 8
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 16A (Tc) 147W (Tc) Surface Mount PowerPAK® 8 x 8
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
21 Weeks
EDACAD-MODELL
STANDARDPAKET
3,000

Technische Daten

Mfr
Vishay Siliconix
Series
-
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
255mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
82 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1416 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
147W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 8 x 8
Package / Case
8-PowerTDFN
Base Product Number
SIHH14

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

SIHH14N60E-T1-GE3DKR
SIHH14N60E-T1-GE3TR
SIHH14N60E-T1-GE3CT

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHH14N60E-T1-GE3

Dokumente und Medien

Datasheets
1(SIHH14N60E)
Featured Product
1(SiHH26N60E, SiHH21N60E, SiHH14N60E, and SiHH11N60E MOSFETs)
HTML Datasheet
1(SIHH14N60E)

Menge Preis

QUANTITÄT: 6000
Einzelpreis: $1.65
Verpackung: Tape & Reel (TR)
MinMultiplikator: 3000
QUANTITÄT: 3000
Einzelpreis: $1.71983
Verpackung: Tape & Reel (TR)
MinMultiplikator: 3000
QUANTITÄT: 1
Einzelpreis: $3.53
Verpackung: Cut Tape (CT)
MinMultiplikator: 1

Stellvertreter

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