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ChinaSIS902DN-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SIS902DN-T1-GE3
BESCHREIBUNG
MOSFET 2N-CH 75V 4A PPAK 1212
DETAILIERTE BESCHREIBUNG
Mosfet Array 75V 4A 15.4W Surface Mount PowerPAK® 1212-8 Dual
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
75V
Current - Continuous Drain (Id) @ 25°C
4A
Rds On (Max) @ Id, Vgs
186mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
175pF @ 38V
Power - Max
15.4W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8 Dual
Supplier Device Package
PowerPAK® 1212-8 Dual
Base Product Number
SIS902
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SIS902DN-T1-GE3DKR
SIS902DN-T1-GE3CT
SIS902DN-T1-GE3TR
SIS902DNT1GE3
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Vishay Siliconix SIS902DN-T1-GE3
Dokumente und Medien
Datasheets
1(SIS902DN)
PCN Obsolescence/ EOL
1(PCN- SIL-0722014 10/Jun/2014)
HTML Datasheet
1(SIS902DN)
Menge Preis
-
Stellvertreter
Teil Nr. : SIS990DN-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 14,189
Einzelpreis. : $0.89000
Ersatztyp. : Similar
Verfügbare Menge. : 14,189
Einzelpreis. : $0.89000
Ersatztyp. : Similar