English
Spain
Rusia
Italy
China2SB1117-AZ
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SB1117-AZ
BESCHREIBUNG
SMALL SIGNAL BIPOLAR TRANS PNP
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 25 V 3 A 280MHz 1 W Through Hole
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
773
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
3 A
Voltage - Collector Emitter Breakdown (Max)
25 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 300mA, 3A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
135 @ 1A, 2V
Power - Max
1 W
Frequency - Transition
280MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
3-SSIP
Supplier Device Package
-
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0075
Andere Namen
RENRNS2SB1117-AZ
2156-2SB1117-AZ
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SB1117-AZ
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 773
Einzelpreis: $0.39
Verpackung: Bulk
MinMultiplikator: 773
Verpackung: Bulk
MinMultiplikator: 773
Stellvertreter
-