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ChinaIRFH5220TR2PBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFH5220TR2PBF
BESCHREIBUNG
MOSFET N-CH 200V 3.8A PQFN
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 3.8A (Ta), 20A (Tc) Surface Mount PQFN (5x6)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
400
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Cut Tape (CT)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
3.8A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs
99.9mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id
5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1380 pF @ 50 V
FET Feature
-
Mounting Type
Surface Mount
Supplier Device Package
PQFN (5x6)
Package / Case
8-VQFN Exposed Pad
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IRFH5220TR2PBF-ND
IRFH5220TR2PBFDKR
IRFH5220TR2PBFTR
SP001572556
IRFH5220TR2PBFCT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFH5220TR2PBF
Dokumente und Medien
Datasheets
1(IRFH5220PBF)
Environmental Information
1(PQFN 5x6 RoHS Compliance)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRFH5220PBF)
Menge Preis
-
Stellvertreter
Teil Nr. : BSC12DN20NS3GATMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 12,640
Einzelpreis. : $1.50000
Ersatztyp. : Similar
Verfügbare Menge. : 12,640
Einzelpreis. : $1.50000
Ersatztyp. : Similar