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ChinaHAT2199R-EL-E
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
HAT2199R-EL-E
BESCHREIBUNG
MOSFET N-CH 30V 11A 8SOP
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 11A (Ta) 2W (Ta) Surface Mount 8-SOP
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
325
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
11A (Ta)
Rds On (Max) @ Id, Vgs
16.5mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
1060 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
2W (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOP
Package / Case
8-SOIC (0.154", 3.90mm Width)
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-HAT2199R-EL-E-RETR
RENRNSHAT2199R-EL-E
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation HAT2199R-EL-E
Dokumente und Medien
Datasheets
1(HAT2199R-EL-E)
Menge Preis
QUANTITÄT: 325
Einzelpreis: $0.92
Verpackung: Bulk
MinMultiplikator: 325
Verpackung: Bulk
MinMultiplikator: 325
Stellvertreter
-