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ChinaIPB65R600C6ATMA1
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TEILNUMMER DES HERSTELLERS
IPB65R600C6ATMA1
BESCHREIBUNG
MOSFET N-CH 650V 7.3A D2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO263-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
600mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
63W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IPB65R
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IPB65R600C6ATMA1TR
IPB65R600C6
IPB65R600C6-ND
IPB65R600C6DKR-ND
SP000794382
IPB65R600C6ATMA1DKR
IPB65R600C6CT-ND
IPB65R600C6DKR
IPB65R600C6ATMA1CT
IPB65R600C6CT
IPB65R600C6TR-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPB65R600C6ATMA1
Dokumente und Medien
Datasheets
1(IPx65R600C6)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPx65R600C6)
Simulation Models
1(CoolMOS™ Power MOSFET 650V C6 Spice Model)
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