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ChinaSIR496DP-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SIR496DP-T1-GE3
BESCHREIBUNG
MOSFET N-CH 20V 35A PPAK SO-8
DETAILIERTE BESCHREIBUNG
N-Channel 20 V 35A (Tc) 5W (Ta), 27.7W (Tc) Surface Mount PowerPAK® SO-8
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1570 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
5W (Ta), 27.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Base Product Number
SIR496
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SIR496DP-T1-GE3CT
Q6936817FH
SIR496DP-T1-GE3TR
SIR496DPT1GE3
SIR496DP-T1-GE3DKR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIR496DP-T1-GE3
Dokumente und Medien
Datasheets
1(SIR496DP)
PCN Assembly/Origin
1(Multiple Fabracation Changes09/Jul/2014)
Menge Preis
-
Stellvertreter
Teil Nr. : SIR410DP-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 7,636
Einzelpreis. : $1.03000
Ersatztyp. : Direct
Verfügbare Menge. : 7,636
Einzelpreis. : $1.03000
Ersatztyp. : Direct
Teil Nr. : BSC046N02KSGAUMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 19,920
Einzelpreis. : $1.60000
Ersatztyp. : Similar
Verfügbare Menge. : 19,920
Einzelpreis. : $1.60000
Ersatztyp. : Similar