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Part Number Overview
Manufacturer Part Number
STB80NF55-06-1
Description
MOSFET N-CH 55V 80A I2PAK
Detailed Description
N-Channel 55 V 80A (Tc) 300W (Tc) Through Hole I2PAK
Manufacturer
STMicroelectronics
Standard LeadTime
Edacad Model
STB80NF55-06-1 Models
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
STMicroelectronics
Series
STripFET™ II
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
6.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
189 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4400 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
STB80
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
STB80NF55-06-1-ND
-497-16196-5
497-16196-5
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STB80NF55-06-1
Documents & Media
Datasheets
1(STB80NF55-06(-1), STP80NF55-06(FP))
Other Related Documents
1(STB80NF55-06-1 View All Specifications)
Product Training Modules
()
PCN Assembly/Origin
1(New Molding Compound 30/Aug/2019)
EDA Models
1(STB80NF55-06-1 Models)
Quantity Price
-
Substitutes
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