Mfr
Renesas Electronics Corporation
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
16.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs
4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
66 pF @ 25 V
Power Dissipation (Max)
750mW (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92-3
Package / Case
TO-226-3, TO-92-3 Short Body