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Part Number Overview
Manufacturer Part Number
H5N2305P-E
Description
POWER FIELD-EFFECT TRANSISTOR
Detailed Description
N-Channel 230 V 35A (Ta) 60W (Tc) Through Hole TO-3PFM
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
42
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
230 V
Current - Continuous Drain (Id) @ 25°C
35A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
700mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
105 nC @ 10 V
Vgs (Max)
±30V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
150°C
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-3PFM
Package / Case
TO-3PFM, SC-93-3
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
RENRNSH5N2305P-E
2156-H5N2305P-E
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation H5N2305P-E
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 42
Unit Price: $7.28
Packaging: Bulk
MinMultiplier: 42
Packaging: Bulk
MinMultiplier: 42
Substitutes
-