STB26NM60ND

Part Number Overview

Manufacturer Part Number

STB26NM60ND

Description

MOSFET N-CH 600V 21A D2PAK

Detailed Description

N-Channel 600 V 21A (Tc) 190W (Tc) Surface Mount TO-263 (D2PAK)

Manufacturer

STMicroelectronics

Standard LeadTime

Edacad Model

Standard Package

1,000

Supplier Stocks

>>>Click to Check<<<

Technical specifications

Mfr

STMicroelectronics

Series

FDmesh™ II

Package

Tape & Reel (TR)

Product Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600 V

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

175mOhm @ 10.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

54.6 nC @ 10 V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1817 pF @ 100 V

FET Feature

-

Power Dissipation (Max)

190W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D2PAK)

Package / Case

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Base Product Number

STB26N

Environmental & Export Classifications

RoHS Status

ROHS3 Compliant

Moisture Sensitivity Level (MSL)

1 (Unlimited)

REACH Status

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Other Names

-497-14264-1

-497-14264-2

497-14264-6

-497-14264-6

497-14264-1

497-14264-2

STB26NM60ND-ND

Documents & Media

Datasheets

1(STx26NM60ND)

Product Training Modules

1(STMicroelectronics ST MOSFETs)

PCN Obsolescence/ EOL

1(IPD/15/9345 04/Aug/2015)

PCN Design/Specification

1(IPG-PWR/14/8422 11/Apr/2014)

HTML Datasheet

1(STx26NM60ND)

Quantity Price

-

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STB26NM60ND

Part Number Overview

Technical specifications

Environmental & Export Classifications

Other Names

Category

Documents & Media

Quantity Price

Substitutes

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