China
Spain
Rusia
Italy
GermanyIRFR1205PBF
Part Number Overview
Manufacturer Part Number
IRFR1205PBF
Description
MOSFET N-CH 55V 44A DPAK
Detailed Description
N-Channel 55 V 44A (Tc) 107W (Tc) Surface Mount TO-252AA (DPAK)
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
75
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
27mOhm @ 26A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
107W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IRFR1205
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001552040
2156-IRFR1205PBF-IT
IFEINFIRFR1205PBF
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFR1205PBF
Documents & Media
Datasheets
1(IRFR/U1205PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Design Resources
1(IRFR1205 Saber Model)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRFR/U1205PbF)
Simulation Models
1(IRFR1205 Spice Model)
Quantity Price
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