Technology
Silicon Carbide (SiC)
Configuration
6 N-Channel (3-Phase Bridge)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
74A (Tc)
Rds On (Max) @ Id, Vgs
34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id
4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs
161nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
2788pF @ 1000V
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SP3
Base Product Number
APTMC120