China
Spain
Rusia
Italy
Germany2N3019
Part Number Overview
Manufacturer Part Number
2N3019
Description
TRANS NPN 80V 1A TO39
Detailed Description
Bipolar (BJT) Transistor NPN 80 V 1 A 100MHz 800 mW Through Hole TO-39
Manufacturer
STMicroelectronics
Standard LeadTime
Edacad Model
2N3019 Models
Standard Package
500
Supplier Stocks
Technical specifications
Mfr
STMicroelectronics
Series
-
Package
Tube
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
80 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
800 mW
Frequency - Transition
100MHz
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Supplier Device Package
TO-39
Base Product Number
2N30
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
497-2634-5
497-2634-5-NDR
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/STMicroelectronics 2N3019
Documents & Media
Datasheets
1(2N3019)
HTML Datasheet
1(2N3019)
EDA Models
1(2N3019 Models)
Quantity Price
-
Substitutes
-