Part Number Overview

Manufacturer Part Number
SIHF30N60E-GE3
Description
MOSFET N-CH 600V 29A TO220
Detailed Description
N-Channel 600 V 29A (Tc) 37W (Tc) Through Hole
Manufacturer
Vishay Siliconix
Standard LeadTime
21 Weeks
Edacad Model
Standard Package
1
Supplier Stocks

Technical specifications

Mfr
Vishay Siliconix
Series
E
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
125mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2600 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
37W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Base Product Number
SIHF30

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

SIHF30N60E-GE3DKRINACTIVE
SIHF30N60E-GE3DKR
SIHF30N60E-GE3DKR-ND
742-SIHF30N60E-GE3
SIHF30N60E-GE3CT
SIHF30N60E-GE3CT-ND
SIHF30N60E-GE3TR
SIHF30N60E-GE3-ND
SIHF30N60E-GE3TR-ND
SIHF30N60E-GE3TRINACTIVE

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHF30N60E-GE3

Documents & Media

Datasheets
1(SIHP30N60E)
PCN Design/Specification
1(Advisory 20/Mar/2019)
PCN Assembly/Origin
1(SIL-079-2014-Rev-0 26/Sep/2014)
HTML Datasheet
1(SIHP30N60E)

Quantity Price

Quantity: 2000
Unit Price: $2.86638
Packaging: Tube
MinMultiplier: 1
Quantity: 1000
Unit Price: $3.04414
Packaging: Tube
MinMultiplier: 1
Quantity: 500
Unit Price: $3.5552
Packaging: Tube
MinMultiplier: 1
Quantity: 100
Unit Price: $3.9996
Packaging: Tube
MinMultiplier: 1
Quantity: 10
Unit Price: $4.944
Packaging: Tube
MinMultiplier: 1
Quantity: 1
Unit Price: $5.89
Packaging: Tube
MinMultiplier: 1

Substitutes

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