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Part Number Overview
Manufacturer Part Number
IRFR220NPBF
Description
MOSFET N-CH 200V 5A DPAK
Detailed Description
N-Channel 200 V 5A (Tc) 43W (Tc) Surface Mount TO-252AA (DPAK)
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
IRFR220NPBF Models
Standard Package
75
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
600mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
43W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IRFR220
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
64-4116PBF-ND
64-4116PBF
INFINFIRFR220NPBF
SP001560574
2156-IRFR220NPBF
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFR220NPBF
Documents & Media
Datasheets
1(IRFR220NPbF, IRFU220NPbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Design Resources
1(IRFR220NPBF Saber Model)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRFR220NPbF, IRFU220NPbF)
EDA Models
1(IRFR220NPBF Models)
Simulation Models
1(IRFR220NPBF Spice Model)
Quantity Price
-
Substitutes
Part No. : IRFR220PBF
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