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Part Number Overview
Manufacturer Part Number
PBSS4160PANPS115
Description
SMALL SIGNAL BIPOLAR TRANSISTOR
Detailed Description
Bipolar (BJT) Transistor Array NPN, PNP 60V 1A 175MHz, 125MHz 370mW Surface Mount DFN2020D-6
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
2,112
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN, PNP
Current - Collector (Ic) (Max)
1A
Voltage - Collector Emitter Breakdown (Max)
60V
Vce Saturation (Max) @ Ib, Ic
220mV @ 100mA, 1A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
290 @ 100mA, 2V
Power - Max
370mW
Frequency - Transition
175MHz, 125MHz
Operating Temperature
150°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Package / Case
6-UDFN Exposed Pad
Supplier Device Package
DFN2020D-6
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
NEXNXPPBSS4160PANPS115
2156-PBSS4160PANPS115
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/NXP USA Inc. PBSS4160PANPS115
Documents & Media
Datasheets
1(PBSS4160PANPS)
HTML Datasheet
1(PBSS4160PANPS)
Quantity Price
-
Substitutes
-