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Part Number Overview
Manufacturer Part Number
IXFX32N50Q
Description
MOSFET N-CH 500V 32A PLUS247-3
Detailed Description
N-Channel 500 V 32A (Tc) 416W (Tc) Through Hole PLUS247™-3
Manufacturer
IXYS
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
IXYS
Series
HiPerFET™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
160mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3950 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
416W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PLUS247™-3
Package / Case
TO-247-3 Variant
Base Product Number
IXFX32
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFX32N50Q
Documents & Media
Datasheets
1(IXF(K,X)32N50Q)
PCN Obsolescence/ EOL
1(Mult Mosfet EOL 22/Mar/2017)
HTML Datasheet
1(IXF(K,X)32N50Q)
Quantity Price
-
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