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Part Number Overview
Manufacturer Part Number
94-2113
Description
MOSFET N-CH 30V 116A D2PAK
Detailed Description
N-Channel 30 V 116A (Tc) 3.8W (Ta), 180W (Tc) Surface Mount D2PAK
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
116A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 4.5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
3290 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 180W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IRL2203
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
*IRL2203NS
SP001517146
IRL2203NS-ND
IRL2203NS
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies 94-2113
Documents & Media
Datasheets
1(IRL2203NS(NL))
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Design Resources
1(IRL2203NS Saber Model)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRL2203NS(NL))
Quantity Price
-
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