Part Number Overview

Manufacturer Part Number
STI33N60M2
Description
MOSFET N-CH 600V 26A I2PAK
Detailed Description
N-Channel 600 V 26A (Tc) 190W (Tc) Through Hole TO-262 (I2PAK)
Manufacturer
STMicroelectronics
Standard LeadTime
16 Weeks
Edacad Model
STI33N60M2 Models
Standard Package
50
Supplier Stocks

Technical specifications

Mfr
STMicroelectronics
Series
MDmesh™ II Plus
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
125mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
45.5 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1781 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
190W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
STI33

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

497-15016-5
-497-15016-5

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STI33N60M2

Documents & Media

Datasheets
1(STx33N60M2)
Product Training Modules
1(STMicroelectronics ST MOSFETs)
PCN Design/Specification
1(STx33N60M2 Datasheet Chg 31/May/2019)
HTML Datasheet
1(STx33N60M2)
EDA Models
1(STI33N60M2 Models)

Quantity Price

Quantity: 1000
Unit Price: $1.88529
Packaging: Tube
MinMultiplier: 1000

Substitutes

Part No. : IPI60R099CPXKSA1
Manufacturer. : Infineon Technologies
Quantity Available. : 500
Unit Price. : $8.16000
Substitute Type. : Similar