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AIMW120R045M1XKSA1
Part Number Overview
Manufacturer Part Number
AIMW120R045M1XKSA1
Description
SICFET N-CH 1200V 52A TO247-3
Detailed Description
N-Channel 1200 V 52A (Tc) 228W (Tc) Through Hole PG-TO247-3
Manufacturer
Infineon Technologies
Standard LeadTime
39 Weeks
Edacad Model
Standard Package
30
Supplier Stocks
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Technical specifications
Mfr
Infineon Technologies
Series
CoolSiC™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
52A (Tc)
Rds On (Max) @ Id, Vgs
59mOhm @ 20A, 15V
Vgs(th) (Max) @ Id
5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
57 nC @ 15 V
Vgs (Max)
+20V, -7V
Input Capacitance (Ciss) (Max) @ Vds
2130 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
228W (Tc)
Operating Temperature
-40°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3
Package / Case
TO-247-3
Base Product Number
AIMW120
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP002472666
448-AIMW120R045M1XKSA1
2156-AIMW120R045M1XKSA1-448
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies AIMW120R045M1XKSA1
Documents & Media
Datasheets
1(AIMW120R045M1)
Environmental Information
1(RoHS Certificate)
Featured Product
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Quantity Price
Quantity: 510
Unit Price: $14.56727
Packaging: Tube
MinMultiplier: 1
Quantity: 120
Unit Price: $17.071
Packaging: Tube
MinMultiplier: 1
Quantity: 30
Unit Price: $18.209
Packaging: Tube
MinMultiplier: 1
Quantity: 1
Unit Price: $21.96
Packaging: Tube
MinMultiplier: 1
Substitutes
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