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Part Number Overview
Manufacturer Part Number
BSC159N10LSFGATMA1
Description
MOSFET N-CH 100V 9.4A/63A TDSON
Detailed Description
N-Channel 100 V 9.4A (Ta), 63A (Tc) 114W (Tc) Surface Mount PG-TDSON-8-1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
5,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
9.4A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
15.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.4V @ 72µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2500 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
114W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-1
Package / Case
8-PowerTDFN
Base Product Number
BSC159
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
BSC159N10LSFG
BSC159N10LSF GDKR
BSC159N10LSFGATMA1TR
BSC159N10LSF GCT
BSC159N10LSF GTR-ND
BSC159N10LSF G
BSC159N10LSFGATMA1DKR
BSC159N10LSF G-ND
BSC159N10LSF GCT-ND
BSC159N10LSFGATMA1CT
BSC159N10LSF GDKR-ND
SP000379614
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSC159N10LSFGATMA1
Documents & Media
Datasheets
1(BSC159N10LSF G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Other
1(Multiple Changes 09/Jul/2014)
HTML Datasheet
1(BSC159N10LSF G)
Quantity Price
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