Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel, Common Drain
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
54A (Tc), 62A (Tc)
Rds On (Max) @ Id, Vgs
24mOhm @ 38A, 10V, 11mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA, 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
197nC @ 10V, 104nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1370pF @ 25V, 5080pF @ 25V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
ISOPLUSi5-PAK™
Supplier Device Package
ISOPLUS i4-PAC™
Base Product Number
FMP76