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Part Number Overview
Manufacturer Part Number
IPS12CN10LGBKMA1
Description
MOSFET N-CH 100V 69A TO251-3
Detailed Description
N-Channel 100 V 69A (Tc) 125W (Tc) Through Hole PG-TO251-3-11
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
69A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
11.8mOhm @ 69A, 10V
Vgs(th) (Max) @ Id
2.4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5600 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3-11
Package / Case
TO-251-3 Stub Leads, IPak
Base Product Number
IPS12C
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP000311530
IPS12CN10L G
IPS12CN10L G-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPS12CN10LGBKMA1
Documents & Media
Datasheets
1(IPP,IPS12CN10L G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
Quantity Price
-
Substitutes
Part No. : IPP12CN10LGXKSA1
Manufacturer. : Infineon Technologies
Quantity Available. : 892
Unit Price. : $1.92000
Substitute Type. : Similar
Quantity Available. : 892
Unit Price. : $1.92000
Substitute Type. : Similar