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Part Number Overview
Manufacturer Part Number
SI4778DY-T1-GE3
Description
MOSFET N-CH 25V 8A 8SO
Detailed Description
N-Channel 25 V 8A (Tc) 2.4W (Ta), 5W (Tc) Surface Mount 8-SOIC
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
23mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
680 pF @ 13 V
FET Feature
-
Power Dissipation (Max)
2.4W (Ta), 5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
SI4778
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SI4778DY-T1-GE3DKR
SI4778DY-T1-GE3TR
SI4778DYT1GE3
SI4778DY-T1-GE3CT
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI4778DY-T1-GE3
Documents & Media
Datasheets
1(SI4778DY)
PCN Obsolescence/ EOL
1(Mult Mosfet EOL 30/Aug/2018)
HTML Datasheet
1(SI4778DY)
Quantity Price
-
Substitutes
-