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Part Number Overview
Manufacturer Part Number
FCP104N60
Description
POWER FIELD-EFFECT TRANSISTOR, 3
Detailed Description
N-Channel 600 V 37A (Tc) 357W (Tc) Through Hole TO-220-3
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
93
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
SuperFET® II
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
37A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
104mOhm @ 18.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
82 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4165 pF @ 380 V
FET Feature
-
Power Dissipation (Max)
357W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
2156-FCP104N60
ONSFSCFCP104N60
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FCP104N60
Documents & Media
Datasheets
1(FCP104N60 Datasheet)
Quantity Price
Quantity: 93
Unit Price: $3.23
Packaging: Bulk
MinMultiplier: 93
Packaging: Bulk
MinMultiplier: 93
Substitutes
-