Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel Complementary
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
590mA (Ta)
Rds On (Max) @ Id, Vgs
670mOhm @ 590mA, 4.5V, 1.4Ohm @ 410mA, 4.5V
Vgs(th) (Max) @ Id
0.95V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.05nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
30.3pF @ 15V, 43.2pF @ 15V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-XFDFN Exposed Pad
Supplier Device Package
DFN1010B-6