Part Number Overview

Manufacturer Part Number
IRFIB7N50A
Description
MOSFET N-CH 500V 6.6A TO220-3
Detailed Description
N-Channel 500 V 6.6A (Tc) 60W (Tc) Through Hole TO-220-3
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
IRFIB7N50A Models
Standard Package
1,000
Supplier Stocks

Technical specifications

Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
520mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1423 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3 Full Pack, Isolated Tab
Base Product Number
IRFIB7

Environmental & Export Classifications

RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRFIB7N50A

Documents & Media

Datasheets
1(IRFIB7N50A,SiHFIB7N50A)
HTML Datasheet
1(IRFIB7N50A,SiHFIB7N50A)
EDA Models
1(IRFIB7N50A Models)

Quantity Price

-

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