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Part Number Overview
Manufacturer Part Number
IRFBE30STRL
Description
MOSFET N-CH 800V 4.1A D2PAK
Detailed Description
N-Channel 800 V 4.1A (Tc) 125W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
-
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
78 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IRFBE30
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRFBE30STRL
Documents & Media
Datasheets
1(IRFBE30)
HTML Datasheet
1(IRFBE30)
Quantity Price
-
Substitutes
Part No. : IRFBE30STRLPBF
Manufacturer. : Vishay Siliconix
Quantity Available. : 800
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