China
Spain
Rusia
Italy
GermanyFQPF3N25
Part Number Overview
Manufacturer Part Number
FQPF3N25
Description
MOSFET N-CH 250V 2.3A TO220F
Detailed Description
N-Channel 250 V 2.3A (Tc) 27W (Tc) Through Hole TO-220F-3
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FQPF3N25 Models
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.2Ohm @ 1.15A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.2 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
170 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
27W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3
Package / Case
TO-220-3 Full Pack
Base Product Number
FQPF3
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQPF3N25
Documents & Media
Datasheets
1(FQPF3N25)
Environmental Information
()
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Assembly/Origin
1(QFET FAB 02-Mar-2022)
PCN Packaging
1(Mult Devices 24/Oct/2017)
EDA Models
1(FQPF3N25 Models)
Quantity Price
-
Substitutes
-