China
Spain
Rusia
Italy
GermanyIRLR2905PBF
Part Number Overview
Manufacturer Part Number
IRLR2905PBF
Description
MOSFET N-CH 55V 42A DPAK
Detailed Description
N-Channel 55 V 42A (Tc) 110W (Tc) Surface Mount TO-252AA (DPAK)
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
IRLR2905PBF Models
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
27mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
1700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
64-4134PBF
SP001572902
64-4134PBF-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRLR2905PBF
Documents & Media
Datasheets
1(IRLR/U2905PbF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Design Resources
1(IRLR2905TRPBF Saber Model)
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Barcode Label Update 24/Feb/2017)
HTML Datasheet
1(IRLR/U2905PbF)
EDA Models
1(IRLR2905PBF Models)
Simulation Models
1(IRLR2905TRPBF Spice Model)
Quantity Price
-
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