Part Number Overview

Manufacturer Part Number
IPD50N04S309ATMA1
Description
MOSFET N-CH 40V 50A TO252-3
Detailed Description
N-Channel 40 V 50A (Tc) 63W (Tc) Surface Mount PG-TO252-3-11
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 28µA
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1750 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
63W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-11
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
IPD50

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

INFINFIPD50N04S309ATMA1
IPD50N04S3-09-ND
SP000415582
2156-IPD50N04S309ATMA1
IPD50N04S309ATMA1TR
IPD50N04S3-09

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD50N04S309ATMA1

Documents & Media

Datasheets
1(IPD50N04S3-09)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Assembly/Origin
1(Mult Dev Wafer Fab 12/Feb/2019)
PCN Packaging
1(Cover Tape Width Update 17/Jun/2015)
HTML Datasheet
1(IPD50N04S3-09)

Quantity Price

Quantity: 12500
Unit Price: $0.56007
Packaging: Tape & Reel (TR)
MinMultiplier: 2500
Quantity: 5000
Unit Price: $0.58717
Packaging: Tape & Reel (TR)
MinMultiplier: 2500
Quantity: 2500
Unit Price: $0.61653
Packaging: Tape & Reel (TR)
MinMultiplier: 2500

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