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Part Number Overview
Manufacturer Part Number
SIHU4N80E-GE3
Description
MOSFET N-CH 800V 4.3A IPAK
Detailed Description
N-Channel 800 V 4.3A (Tc) 69W (Tc) Through Hole IPAK (TO-251)
Manufacturer
Vishay Siliconix
Standard LeadTime
10 Weeks
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
E
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.27Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
622 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
69W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK (TO-251)
Package / Case
TO-251-3 Long Leads, IPak, TO-251AB
Base Product Number
SIHU4
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHU4N80E-GE3
Documents & Media
Datasheets
1(SIHU4N80E)
HTML Datasheet
1(SIHU4N80E)
Quantity Price
Quantity: 3000
Unit Price: $0.85138
Packaging: Tube
MinMultiplier: 3000
Packaging: Tube
MinMultiplier: 3000
Substitutes
Part No. : SIHU4N80AE-GE3
Manufacturer. : Vishay Siliconix
Quantity Available. : 2,995
Unit Price. : $1.55000
Substitute Type. : Parametric Equivalent
Quantity Available. : 2,995
Unit Price. : $1.55000
Substitute Type. : Parametric Equivalent