China
Spain
Rusia
Italy
GermanyNVD6416ANLT4G-001
Part Number Overview
Manufacturer Part Number
NVD6416ANLT4G-001
Description
MOSFET N-CH 100V 19A DPAK-3
Detailed Description
N-Channel 100 V 19A (Tc) 71W (Tc) Surface Mount DPAK-3
Manufacturer
onsemi
Standard LeadTime
Edacad Model
NVD6416ANLT4G-001 Models
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
74mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
71W (Tc)
Operating Temperature
-55°C ~ 175°C
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
DPAK-3
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
NVD641
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2832-NVD6416ANLT4G-001-488
2832-NVD6416ANLT4G-001TR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NVD6416ANLT4G-001
Documents & Media
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 16/Jul/2019)
PCN Assembly/Origin
1(Mold Compound 16/Aug/2018)
EDA Models
1(NVD6416ANLT4G-001 Models)
Quantity Price
-
Substitutes
-