Part Number Overview

Manufacturer Part Number
IPD60R600C6BTMA1
Description
MOSFET N-CH 600V 7.3A TO252-3
Detailed Description
N-Channel 600 V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO252-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
CoolMOS™ C6
Package
Tape & Reel (TR)
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
600mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id
3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
20.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
63W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number
IPD60R

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

IPD60R600C6INTR
IPD60R600C6INTR-ND
IPD60R600C6
IPD60R600C6BTMA1TR
IPD60R600C6INCT
IPD60R600C6BTMA1CT
IPD60R600C6BTMA1DKR
IPD60R600C6INDKR
IPD60R600C6INCT-ND
IPD60R600C6INDKR-ND
SP000660622

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD60R600C6BTMA1

Documents & Media

Datasheets
1(IPx60R600C6)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Packaging
()
HTML Datasheet
1(IPx60R600C6)
Simulation Models
1(CoolMOS™ Power MOSFET 600V C6 Spice Model)

Quantity Price

-

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