Mfr
Toshiba Semiconductor and Storage
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
49.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
55mOhm @ 24.6A, 10V
Vgs(th) (Max) @ Id
3.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
6500 pF @ 300 V
Power Dissipation (Max)
400W (Tc)
Operating Temperature
150°C
Mounting Type
Through Hole
Supplier Device Package
TO-247
Base Product Number
TK49N65