China
Spain
Rusia
Italy
GermanyIPB47N10S33ATMA1
Part Number Overview
Manufacturer Part Number
IPB47N10S33ATMA1
Description
MOSFET N-CH 100V 47A TO263-3
Detailed Description
N-Channel 100 V 47A (Tc) 175W (Tc) Surface Mount PG-TO263-3-2
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
33mOhm @ 33A, 10V
Vgs(th) (Max) @ Id
4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
105 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
175W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IPB47N
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPB47N10S33ATMA1DKR
IPB47N10S33ATMA1TR
IPB47N10S33
2156-IPB47N10S33ATMA1
SP000225702
IPB47N10S-33DKR
IPB47N10S-33TR
IPB47N10S-33
IPB47N10S-33DKR-ND
IPB47N10S-33CT
IPB47N10S33ATMA1CT
IPB47N10S-33TR-ND
IFEINFIPB47N10S33ATMA1
IPB47N10S-33-ND
IPB47N10S-33CT-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPB47N10S33ATMA1
Documents & Media
Datasheets
1(IPx47N10S-33)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPx47N10S-33)
Quantity Price
-
Substitutes
-