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Part Number Overview
Manufacturer Part Number
SPD01N60C3BTMA1
Description
MOSFET N-CH 650V 800MA TO252-3
Detailed Description
N-Channel 650 V 800mA (Tc) 11W (Tc) Surface Mount PG-TO252-3-11
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
800mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
100 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
11W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-11
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number
SPD01N
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SPD01N60C3INCT
SPD01N60C3INCT-ND
SPD01N60C3INDKR-ND
SPD01N60C3BTMA1TR
SPD01N60C3-ND
SP000307382
SP000012114
SPD01N60C3BTMA1DKR
ROCINFSPD01N60C3BTMA1
SPD01N60C3INTR
SPD01N60C3INTR-ND
SPD01N60C3INDKR
2156-SPD01N60C3BTMA1
SPD01N60C3XT
SPD01N60C3BTMA1CT
SPD01N60C3
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPD01N60C3BTMA1
Documents & Media
Datasheets
1(SPD,SPU01N60C3)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Cover Tape Width Cancellation 14/Jul/2015)
HTML Datasheet
1(SPD,SPU01N60C3)
Quantity Price
-
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