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Part Number Overview
Manufacturer Part Number
RN2101,LF(CT
Description
TRANS PREBIAS PNP 50V 0.1A SSM
Detailed Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SSM
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
52 Weeks
Edacad Model
RN2101,LF(CT Models
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Active
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
4.7 kOhms
Resistor - Emitter Base (R2)
4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
200 MHz
Power - Max
100 mW
Mounting Type
Surface Mount
Package / Case
SC-75, SOT-416
Supplier Device Package
SSM
Base Product Number
RN2101
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
RN2101LF(CTTR
RN2101LF(CTTRDKR-ND
RN2101LF(CTCT
RN2101(T5LFT)DKR
RN2101(T5L,F,T)
RN2101(T5LFT)CT-ND
RN2101(T5LFT)TR-ND
RN2101,LF(CB
RN2101(T5LFT)TR
RN2101LF(CTDKR
RN2101(T5LFT)DKR-ND
RN2101(T5LFT)CT
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Toshiba Semiconductor and Storage RN2101,LF(CT
Documents & Media
Datasheets
1(RN2101-06)
EDA Models
1(RN2101,LF(CT Models)
Quantity Price
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Unit Price: $0.0197
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