Part Number Overview

Manufacturer Part Number
CDM2206-800LR
Description
MOSFET N-CH 800V 6A TO220
Detailed Description
N-Channel 800 V 6A (Tc) 110W (Tc) Through Hole TO-220-3
Manufacturer
Central Semiconductor Corp
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks

Technical specifications

Mfr
Central Semiconductor Corp
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
950mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
24.3 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
474.7 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Central Semiconductor Corp CDM2206-800LR

Documents & Media

Datasheets
1(CDM2206-800LR)
Environmental Information
1(RoHS Cert)
PCN Obsolescence/ EOL
1(CDM220 EOL 4/Feb/2021)

Quantity Price

-

Substitutes

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