Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
3A
Rds On (Max) @ Id, Vgs
85mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs
4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
320pF @ 10V
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Supplier Device Package
8-EMH
Base Product Number
EMH2308