Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
40A
Voltage - Forward (Vf) (Max) @ If
1.75 V @ 20 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
200 µA @ 1200 V
Capacitance @ Vr, F
810pF @ 1V, 1MHz
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Operating Temperature - Junction
175°C (Max)
Base Product Number
WNSC4