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Part Number Overview
Manufacturer Part Number
BSB008NE2LXXUMA1
Description
MOSFET N-CH 25V 46A/180A 2WDSON
Detailed Description
N-Channel 25 V 46A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount MG-WDSON-2, CanPAK M™
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
BSB008NE2LXXUMA1 Models
Standard Package
5,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
46A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
0.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
343 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
16000 pF @ 12 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
MG-WDSON-2, CanPAK M™
Package / Case
3-WDSON
Base Product Number
BSB008
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
448-BSB008NE2LXXUMA1CT
448-BSB008NE2LXXUMA1TR
SP000880866
448-BSB008NE2LXXUMA1DKR
BSB008NE2LXXUMA1-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSB008NE2LXXUMA1
Documents & Media
Datasheets
1(BSB008NE2LX)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(BSB008NE2LX)
EDA Models
1(BSB008NE2LXXUMA1 Models)
Simulation Models
1(MOSFET OptiMOS™ 25V N-Channel Spice Model)
Quantity Price
-
Substitutes
Part No. : IRF6717MTRPBF
Manufacturer. : Infineon Technologies
Quantity Available. : 8,674
Unit Price. : $2.79000
Substitute Type. : Similar
Quantity Available. : 8,674
Unit Price. : $2.79000
Substitute Type. : Similar