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Part Number Overview
Manufacturer Part Number
NTMS4101PR2
Description
MOSFET P-CH 20V 6.9A 8SOIC
Detailed Description
P-Channel 20 V 6.9A (Ta) 1.38W (Tj) Surface Mount 8-SOIC
Manufacturer
onsemi
Standard LeadTime
Edacad Model
NTMS4101PR2 Models
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
6.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
19mOhm @ 6.9A, 4.5V
Vgs(th) (Max) @ Id
450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
3200 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.38W (Tj)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
NTMS41
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTMS4101PR2
Documents & Media
Datasheets
1(NTMS4101P)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 01/Apr/2004)
HTML Datasheet
1(NTMS4101P)
EDA Models
1(NTMS4101PR2 Models)
Quantity Price
-
Substitutes
-