Part Number Overview

Manufacturer Part Number
TP65H050WS
Description
GANFET N-CH 650V 34A TO247-3
Detailed Description
N-Channel 650 V 34A (Tc) 119W (Tc) Through Hole TO-247-3
Manufacturer
Transphorm
Standard LeadTime
16 Weeks
Edacad Model
Standard Package
Supplier Stocks

Technical specifications

Mfr
Transphorm
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
12V
Rds On (Max) @ Id, Vgs
60mOhm @ 22A, 10V
Vgs(th) (Max) @ Id
4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
119W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
TP65H050

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Transphorm TP65H050WS

Documents & Media

Datasheets
1(TP65H050WS)
Featured Product
1(TP65H050WS/TP65H035WS Third Generation (Gen III) Gallium Nitride (GaN) Field-Effect Transistors (FETs))
HTML Datasheet
1(TP65H050WS)
Simulation Models
1(TP65H050WS Spice Model)

Quantity Price

Quantity: 510
Unit Price: $12.19929
Packaging: Tube
MinMultiplier: 1
Quantity: 120
Unit Price: $13.46125
Packaging: Tube
MinMultiplier: 1
Quantity: 30
Unit Price: $14.30267
Packaging: Tube
MinMultiplier: 1
Quantity: 1
Unit Price: $17.67
Packaging: Tube
MinMultiplier: 1

Substitutes

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