PHD34NQ10T,118

Part Number Overview

Manufacturer Part Number

PHD34NQ10T,118

Description

MOSFET N-CH 100V 35A DPAK

Detailed Description

N-Channel 100 V 35A (Tc) 136W (Tc) Surface Mount DPAK

Manufacturer

NXP USA Inc.

Standard LeadTime

Edacad Model

Standard Package

2,500

Supplier Stocks

>>>Click to Check<<<

Technical specifications

Mfr

NXP USA Inc.

Series

TrenchMOS™

Package

Tape & Reel (TR)

Product Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

40mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

40 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1704 pF @ 25 V

FET Feature

-

Power Dissipation (Max)

136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Base Product Number

PHD34

Environmental & Export Classifications

RoHS Status

ROHS3 Compliant

Moisture Sensitivity Level (MSL)

1 (Unlimited)

REACH Status

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Other Names

PHD34NQ10T /T3

PHD34NQ10T /T3-ND

934055807118

Documents & Media

Datasheets

1(PHD34NQ10T)

Environmental Information

()

PCN Packaging

1(All Dev Label Update 15/Dec/2020)

HTML Datasheet

1(PHD34NQ10T)

Quantity Price

-

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PHD34NQ10T,118

Part Number Overview

Technical specifications

Environmental & Export Classifications

Other Names

Category

Documents & Media

Quantity Price

Substitutes

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