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Part Number Overview
Manufacturer Part Number
FQP9N50C
Description
MOSFET N-CH 500V 9A TO220-3
Detailed Description
N-Channel 500 V 9A (Tc) 135W (Tc) Through Hole TO-220-3
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FQP9N50C Models
Standard Package
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
800mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1030 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
135W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Base Product Number
FQP9
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQP9N50C
Documents & Media
Datasheets
1(FQP9N50C, FQPF9N50C)
Environmental Information
1(onsemi RoHS)
PCN Design/Specification
1(Passivation Material 14/May/2008)
PCN Assembly/Origin
1(Mult Dev Asembly Chg 7/May/2020)
HTML Datasheet
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EDA Models
1(FQP9N50C Models)
Product Drawings
1(TO220B03 Pkg Drawing)
Quantity Price
-
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