Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual) Common Drain
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
-
Current - Continuous Drain (Id) @ 25°C
-
Gate Charge (Qg) (Max) @ Vgs
37nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
4-UFBGA, WLBGA
Supplier Device Package
U-WLB1818-4
Base Product Number
DMN1033