Part Number Overview

Manufacturer Part Number
FQPF3N80CYDTU
Description
MOSFET N-CH 800V 3A TO220F-3
Detailed Description
N-Channel 800 V 3A (Tc) 39W (Tc) Through Hole TO-220F-3 (Y-Forming)
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FQPF3N80CYDTU Models
Standard Package
Supplier Stocks

Technical specifications

Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16.5 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
705 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
39W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3 (Y-Forming)
Package / Case
TO-220-3 Full Pack, Formed Leads
Base Product Number
FQPF3

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQPF3N80CYDTU

Documents & Media

Datasheets
1(FQP3N80C, FQPF3N80C)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 14/Mar/2011)
PCN Design/Specification
1(Passivation Material 26/June/2007)
HTML Datasheet
1(FQP3N80C, FQPF3N80C)
EDA Models
1(FQPF3N80CYDTU Models)

Quantity Price

-

Substitutes

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